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?2008 silicon storage technology, inc. s71300-04-000 02/09 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. these specifications are subject to change without notice. data sheet features: ? high gain: ? typically 29 db gain across 2.4~2.5 ghz over temperature 0c to +85c ? high linear output power: ? >28 dbm p1db - please refer to ?absolute maximum stress ratings? on page 4 ? meets 802.11g ofdm acpr requirement up to 23 dbm ? ~4% added evm up to 21 dbm for 54 mbps 802.11g signal ? meets 802.11b acpr requirement up to 23 dbm ? high power-added efficiency/low operating current for both 802.11g/b applications ? ~23%/210 ma @ p out = 22 dbm for 802.11g ? ~25%/240 ma @ p out = 23 dbm for 802.11b ? single-pin low i ref power-up/down control ?i ref <2 ma ? low idle current ?~70 ma i cq ? high-speed power-up/down ? turn on/off time (10%- 90%) <100 ns ? typical power-up/down delay with driver delay included <200 ns ? high temperature stability ? ~1 db gain/power variation between 0c to +85c ? low shut-down current (< 0.1 a) ? excellent on-chip power detection ? <+/- 0.3db variation between 0c to +85c ? <+/- 0.4db variation with 2:1 vswr mismatch ? <+/- 0.3db variation ch1 through ch14 ? 20 db dynamic range on-chip power detection ? simple input/output matching ? packages available ? 16-contact vqfn ? 3mm x 3mm ? all non-pb (lead-free) devices are rohs compliant applications: ? wlan (ieee 802.11g/b) ?home rf ? cordless phones ? 2.4 ghz ism wireless equipment product description the sst12lp14a is a versatile power amplifier based on the highly-reliable ingap/gaas hbt technology. the sst12lp14a can be easily configured for high-power applications with good power-added efficiency while oper- ating over the 2.4- 2.5 ghz frequency band. it typically pro- vides 29 db gain with 23% power-added efficiency @ p out = 22 dbm for 802.11g and 25% power-added efficiency @ p out = 23 dbm for 802.11b. the sst12lp14a has excellent linearity, typically ~4% added evm at 21 dbm output power which is essential for 54 mbps 802.11g operation while meeting 802.11g spec- trum mask at 23 dbm. the sst12lp14a can also be con- figured for high-efficiency operation (typically 17 dbm linear 54 mbps 802.11g output power at 85 ma total power con- sumption) which is desirable in embedded applications such as in hand-held units. the sst12lp14a also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. ultra-low reference current (total i ref ~2 ma) makes the sst12lp14a control- lable by an on/off switching signal directly from the base- band chip. these features coupled with low operating current make the sst12lp14a ideal for the final stage power amplification in battery-powered 802.11g/b wlan transmitter applications. the sst12lp14a has an excellent on-chip, single-ended power detector, which features wide-range (>15 db) with db-wise linearization and high stability over temperature (< +/-0.3 db 0c to +85c), frequency (<+/-0.3 db across channels 1 through 14), and output load (<+/-0.4 db with 2:1 output vswr all phases). the excellent on- chip power detector provides a reliable solution to board-level power control. the sst12lp14a is offered in 16-contact vqfn package. see figure 2 for pin assignments and table 1 for pin descriptions. 2.4 ghz high-power, high-gain power amplifier sst12lp14a sst-gp1214a2.4 ghz high gain high power pa
data sheet 2.4 ghz high-power, high- gain power amplifier sst12lp14a ?2008 silicon storage technology, inc. s71300-04-000 02/09 2 functional blocks figure 1: functional block diagram 2 56 8 16 vcc1 15 1 14 nc nc 49 11 12 10 13 nc vccb vref vref nc vcc2 rfout rfout det nc 3 rfin rfin nc bias circuit 7 1300 b1.0
data sheet 2.4 ghz high-power, high-gain power amplifier sst12lp14a 3 ?2008 silicon storage technology, inc. s71300-04-000 02/09 pin assignments figure 2: pin assignments for 16-contact vqfn pin descriptions table 1: pin description symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground the center pad should be connected to rf ground with several low inductance, low resistance vias nc 1 no connection unconnected pin rfin 2 i rf input, dc decoupled rfin 3 i rf input, dc decoupled nc 4 no connection unconnected pin vccb 5 power supply pwr supply voltage for bias circuit vref 6 pwr 1 st and 2 nd stage idle current control vref 7 pwr 1 st and 2 nd stage idle current control nc 8 no connection unconnected pin det 9 o on-chip power detector rfout 10 o rf output rfout 11 o rf output vcc2 12 power supply pwr power supply, 2 nd stage nc 13 no connection unconnected pin nc 14 no connection unconnected pin nc 15 no connection unconnected pin vcc1 16 power supply pwr power supply, 1 st stage t1.0 1300 56 8 16 vcc1 15 14 nc nc 9 11 12 10 13 nc vccb vref vref nc vcc2 rfout rfout det 2 1 4 3 nc rfin rfin nc 7 1300 16-vqfn p1.0 top view (contacts facing down) rf and dc gnd 0
data sheet 2.4 ghz high-power, high- gain power amplifier sst12lp14a ?2008 silicon storage technology, inc. s71300-04-000 02/09 4 electrical specifications the ac and dc specifications for the power amplifier interface signals. refer to table 2 for the dc voltage and current spec- ifications. refer to figures 3 through 18 for the rf performance. absolute maximum stress ratings (applied conditions greater than t hose listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater t han those defined in the operational sections of this data sheet is not implied. exposu re to absolute maximum stress rating co nditions may affect device reliability.) input power to pins 2 and 3 (p in ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +5 dbm average output power (p out ) 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +26 dbm 1. never measure with cw source. pulsed single-tone source with <50% duty cycle is recommended. exceeding the maximum rating of average output power could cause permanent damage to the device. supply voltage at pins 5, 12, and 16 (v cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +4.0v reference voltage to pins 6 and 7 (v ref ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3v to +3.3v dc supply current (i cc ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 ma operating temperature (t a ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +85oc storage temperature (t stg ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oc to +120oc maximum junction temperature (t j ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oc surface mount solder reflow temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260c for 10 seconds operating range range ambient temp v cc industrial -40c to +85c 3.3v table 2: dc electrical characteristics symbol parameter min. typ max. unit test conditions v cc supply voltage at pins 5, 12, 16 3.0 3.3 3.6 v i cc supply current for 802.11g, 22 dbm 210 ma for 802.11b, 23 dbm 230 ma i cq idle current for 802.11g to meet evm<4% @ 21dbm 70 ma i off shut down current 0.1 a v reg reference voltage for, with 110 resistor 2.75 2.85 2.95 v t2.1 1300
data sheet 2.4 ghz high-power, high-gain power amplifier sst12lp14a 5 ?2008 silicon storage technology, inc. s71300-04-000 02/09 table 3: ac electrical characteristics for configuration symbol parameter min. typ max. unit f l-u frequency range 2400 2485 mhz p out output power @ pin = -6 dbm 11b signals 22 dbm @ pin = -7 dbm 11g signals 21 dbm g small signal gain 28 29 db g var1 gain variation over band (2400~2485 mhz) 0.5 db g var2 gain ripple over channel (20 mhz) 0.2 db acpr meet 11b spectrum mask 22 23 dbm meet 11g ofdm 54 mbps spectrum mask 22 23 dbm added evm @ 21 dbm output with 11g ofdm 54 mbps signal 4 % 2f, 3f, 4f, 5f harmonics at 22 dbm, without external filters -40 dbc t3.2 1300
data sheet 2.4 ghz high-power, high- gain power amplifier sst12lp14a ?2008 silicon storage technology, inc. s71300-04-000 02/09 6 typical performan ce characteristics t est c onditions : v cc = 3.3v, t a = 25c, unless otherwise specified figure 3: s-parameters -80 -70 -60 -50 -40 -30 -20 -10 0 0. 0 1.0 2. 0 3.0 4.0 5.0 6. 0 7.0 8. 0 9.0 10. 0 11.0 -30 -25 -20 -15 -10 -5 0 0. 0 1.0 2. 0 3.0 4.0 5.0 6. 0 7.0 8. 0 9.0 10. 0 11. 0 -40 -30 -20 -10 0 10 20 30 40 0. 0 1.0 2. 0 3.0 4.0 5.0 6. 0 7.0 8. 0 9.0 10. 0 11.0 -3 0 -2 5 -2 0 -1 5 -1 0 -5 0 0.0 1.0 2.0 3.0 4. 0 5.0 6. 0 7.0 8.0 9.0 10. 0 11. 0 frequency (ghz) s11 (db) frequency (ghz) s21 (db) s22 (db) frequency (ghz) s12 (db) frequency (ghz) 1300 s-parms.0.0
data sheet 2.4 ghz high-power, high-gain power amplifier sst12lp14a 7 ?2008 silicon storage technology, inc. s71300-04-000 02/09 typical performan ce characteristics t est c onditions : v cc = 3.3v, t a = 25c, 54 m bps 802.11 g ofdm signal figure 4: emv versus output power figure 5: power gain versus output power 0 1 2 3 4 5 6 7 8 9 10 9 101112131415161718192021222324 output power (dbm) evm (%) fre q =2.412 ghz fre q =2.442 ghz fre q =2.4 8 4 ghz 1300 f3.0 14 16 1 8 20 22 24 26 2 8 30 32 34 9 10111213141516171 8 19 20 21 22 23 24 output power (dbm) power gain (db) fre q =2.412 ghz fre q =2.442 ghz fre q =2.4 8 4 ghz 1300 f4.0
data sheet 2.4 ghz high-power, high- gain power amplifier sst12lp14a ?2008 silicon storage technology, inc. s71300-04-000 02/09 8 figure 6: total current consumption for 802.11g operation versus output power figure 7: pae versus output power 60 8 0 100 120 140 160 1 8 0 200 220 240 260 9 10111213141516171 8 19 20 21 22 23 24 output power (dbm) supply current (ma) fre q =2.412 ghz fre q =2.442 ghz fre q =2.4 8 4 ghz 1300 f5.0 0 2 4 6 8 10 12 14 16 1 8 20 22 24 26 2 8 30 9 10111213141516171 8 19 20 21 22 23 24 output power (dbm) pae (%) fre q =2.412 ghz fre q =2.442 ghz fre q =2.4 8 4 ghz 1300 f6.0
data sheet 2.4 ghz high-power, high-gain power amplifier sst12lp14a 9 ?2008 silicon storage technology, inc. s71300-04-000 02/09 figure 8: 802.11g spectrum mask at 23 dbm figure 9: ch1 detector characteristics over temperature with 2:1 output vswr all phases -70 -60 -50 -40 -30 -20 -10 0 10 2.3 5 2.4 0 2.45 2.50 2.55 freq = 2.412 ghz freq = 2.442 ghz freq = 2.484 ghz frequency (ghz) 1300 ampvsfreq.0.0 amplitude (db) 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 0 2 4 6 8 1012141618202224 freq = 2.412 ghz (0 c) output power (dbm) detector voltage (v) 1300 ch1_ofdm.0.0 freq = 2.412 ghz (25 c) freq = 2.412 ghz (85 c) freq = 2.412 ghz (min) freq = 2.412 ghz (max)
data sheet 2.4 ghz high-power, high- gain power amplifier sst12lp14a ?2008 silicon storage technology, inc. s71300-04-000 02/09 10 figure 10: ch7 detector characteristics over temperature with 2:1 output vswr all phases figure 11: ch14 detector characteristics over temperature with 2:1 output vswr all phases 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 0 2 4 6 8 1012141618202224 output power (dbm) detector voltage (v) 1300 ch7_ofdm.0.0 freq = 2.442 ghz (0 c) freq = 2.442 ghz (25 c) freq = 2.442 ghz (85 c) freq = 2.442 ghz (min) freq = 2.442 ghz (max) 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 0 2 4 6 8 1012141618202224 output power (dbm) detector voltage (v) freq = 2.484 ghz (0 c) freq = 2.484 ghz (25 c) freq = 2.484 ghz (85 c) freq = 2.484 ghz (min) freq = 2.484 ghz (max) 1300 ch14_ofdm.0.0
data sheet 2.4 ghz high-power, high-gain power amplifier sst12lp14a 11 ?2008 silicon storage technology, inc. s71300-04-000 02/09 figure 12: detector characteristics over temperature and over frequency with 2:1 output vswr all phases 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 0 2 4 6 8 1012141618202224 output power (dbm) detector voltage (v) 1300 cha_ofdm.0.0 freq = 2.442 ghz (0 c) freq = 2.412 ghz (25 c) freq = 2.484 ghz (85 c) freq = 2.412 ghz (min) freq = 2.412 ghz (max) freq = 2.442 ghz (min) freq = 2.442 ghz (max) freq = 2.484 ghz (min) freq = 2.484 ghz (max) freq = 2.442 ghz (85 c) freq = 2.412 ghz (85 c) freq = 2.484 ghz (25 c) freq = 2.442 ghz (25 c) freq = 2.412 ghz (0 c) freq = 2.484 ghz (0 c)
data sheet 2.4 ghz high-power, high- gain power amplifier sst12lp14a ?2008 silicon storage technology, inc. s71300-04-000 02/09 12 typical performan ce characteristics t est c onditions : v cc = 3.3v, t a = 25c, 1 m bps 802.11b cck signal figure 13: 802.11b spectrum mask at 23 dbm figure 14: total current consumption for 802.11b operation versus output power -80 -70 -60 -50 -40 -30 -20 -10 0 10 2.35 2.40 2.45 2.50 2.55 freq = 2.412 ghz freq = 2.442 ghz freq = 2.484 ghz frequency (ghz) 1300 ampvsfreqcck.0.0 amplitude (db) 60 8 0 100 120 140 160 1 8 0 200 220 240 260 9 10111213141516171 8 19 20 21 22 23 24 output power (dbm) supply current (ma) fre q =2.412 ghz fre q =2.442 ghz fre q =2.4 8 4 ghz 1300 f13.0
data sheet 2.4 ghz high-power, high-gain power amplifier sst12lp14a 13 ?2008 silicon storage technology, inc. s71300-04-000 02/09 figure 15: ch1 detector characteristics over temperature figure 16: ch7 detector characteristics over temperature 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 0 2 4 6 8 1012141618202224 output power (dbm) detector voltage (v) 1300 ch1_ofdm.0.0 freq = 2.412 ghz (0 c) freq = 2.412 ghz (25 c) freq = 2.412 ghz (85 c) 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 0 2 4 6 8 1012141618202224 output power (dbm) detector voltage (v) 1300 ch7_cck.0.0 freq = 2.442 ghz (0 c) freq = 2.442 ghz (25 c) freq = 2.442 ghz (85 c)
data sheet 2.4 ghz high-power, high- gain power amplifier sst12lp14a ?2008 silicon storage technology, inc. s71300-04-000 02/09 14 typical performan ce characteristics t est c onditions : v cc = 3.3v, t a =25c, 1 m bps 802.11b cck signal figure 17: ch14 detector characteristics over temperature figure 18: detector characteristics over temperature and frequency 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 0 2 4 6 8 1012141618202224 freq = 2.484 ghz (0 c) freq = 2.484 ghz (25 c) freq = 2.484 ghz (85 c) 1300 ch14_cck.0.0 output power (dbm) detector voltage (v) 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 0 2 4 6 8 1012141618202224 output power (dbm) detector voltage (v) 1300 cha_cck.0.0 freq = 2.442 ghz (0 c) freq = 2.412 ghz (25 c) freq = 2.484 ghz (85 c) freq = 2.442 ghz (85 c) freq = 2.412 ghz (85 c) freq = 2.484 ghz (25 c) freq = 2.442 ghz (25 c) freq = 2.412 ghz (0 c) freq = 2.484 ghz (0 c)
data sheet 2.4 ghz high-power, high-gain power amplifier sst12lp14a 15 ?2008 silicon storage technology, inc. s71300-04-000 02/09 figure 19: typical schematic for high-power/high-efficiency 802.11b/g applications 50 /225 mil * rfout 50 100 pf 47 pf 2.4 pf 50 / 120 mil 50 rfin vreg 10 f 0.1 f vcc 15 nh / 0805 r1 = 110 0.1 f det 10 pf 1300 schematic 1.1 suggested operation conditions: 1. v cc = 3.3v 2. center slug to rf ground 3. vreg=2.85v with r1=110 * can be replaced by a ~1.2 nh chip inductor for compactness 47 pf 2.0 pf 0.1 f r2 = 50 2 56 8 16 15 1 14 49 11 12 10 13 3 bias circuit 7
data sheet 2.4 ghz high-power, high- gain power amplifier sst12lp14a ?2008 silicon storage technology, inc. s71300-04-000 02/09 16 product ordering information valid combinations for sst12lp14a SST12LP14A-QVCE sst12lp14a evaluation kits SST12LP14A-QVCE-k note: valid combinations are those products in mass producti on or will be in mass production. consult your sst sales representative to confirm availability of valid combinat ions and to determine availability of new combinations. sst12lp 14a - qvc e sstxx l p xx x -xxx x environmental attribute e 1 = non-pb contact (lead) finish package modifier c = 16 contact package type qv = vqfn version product family identifier product type p = power amplifier voltag e l = 3.0-3.6v frequency of operation 2 = 2.4 ghz product line 1 = sst communications 1. environmental suffix ?e? denotes non-pb solder. sst non-pb solder devices are ?rohs compliant?.
data sheet 2.4 ghz high-power, high-gain power amplifier sst12lp14a 17 ?2008 silicon storage technology, inc. s71300-04-000 02/09 packaging diagrams figure 20: 16-contact very-thin quad flat no-lead (vqfn) sst package code: qvc table 4: revision history revision description date 00 ? initial release of data sheet jun 2005 01 ? removed stability and ruggedness parms from table 3 on page 5 ? updated the schematic in figure 19 on page 15 sep 2005 02 ? updated the schematic in figure 19 on page 15 ? updated figures 4, 5, 6, 7, and 14 ? made minor updates to the ?features:? section ? made minor updates to the ?electrical specifications? section ? applied new format. mar 2006 03 ? updated document status from prelim inary specification to data sheet apr 2008 04 ? updated ?contact information? on page 18. feb 2009 note: 1. complies with jedec jep95 mo-220i, variant veed except external paddle nominal dimensions. 2. from the bottom view, the pin #1 indicator may be either a 45-degree chamfer or a half-circle notch. 3. the external paddle is electrically connected to the die back-side and possibly to certain v ss leads. this paddle can be soldered to the pc board; it is suggested to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). 16-vqfn-3x3-qvc-0.0 1.7 0.5 bsc see notes 2 and 3 pin #1 0.30 0.18 0.076 1.7 0.2 3.00 0.10 3.00 0.10 0.05 max 0.45 0.35 1.00 0.80 pin #1 top view bottom view side view 1mm
data sheet 2.4 ghz high-power, high- gain power amplifier sst12lp14a ?2008 silicon storage technology, inc. s71300-04-000 02/09 18 contact information marketing sst communications corp. 5340 alla road, ste. 210 los angeles, ca 90066 tel: 310-577-3600 fax: 310-577-3605 sales and marketing offices north america asia pacific north silicon storage technology, inc. sst macao 1171 sonora court room n, 6th floor, sunnyvale, ca 94086-5308 macao finance center, no. 202a-246, tel: 408-735-9110 rua de pequim, macau fax: 408-735-9036 tel: 853-2870-6022 fax: 853-2870-6023 europe asia pacific south silicon storage technology ltd. sst communications co. mark house 16f-6, no. 75, sec.1, sintai 5 th rd 9-11 queens road sijhih cit y, taipei county 22101 hersham, surrey taiwan, r.o.c. kt12 5lu uk tel: 886-2-8698-1198 tel: 44 (0) 1932-238133 fax: 886-2-8698-1190 fax: 44 (0) 1932-230567 japan korea sst japan sst korea nof tameike bldg, 9f 6f, heungkuk life insurance bldg 6-7 1-1-14 akasaka, minato-ku sunae-dong, bundang-gu, sungnam-si tokyo, japan 107-0052 kyungki-do, korea, 463-020 tel: 81-3-5575-5515 tel: 82-31-715-9138 fax:81-3-5575-5516 fax: 82-31-715-9137 silicon storage technology, inc. ? 1171 sonora court ? sunnyvale, ca 94086 ? telephone 408-735-9110 ? fax 408-735-9036 www.superflash.com or www.sst.com

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